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Freescale Semiconductor Technical Data
MRF5S9070NR1 Rev. 3, 12/2004
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. * Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 26 Volts, IDQ = 600 mA, Pout = 14 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Power Gain -- 17.8 dB Drain Efficiency -- 30% ACPR @ 750 kHz Offset -- - 47 dBc @ 30 kHz Bandwidth * Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 70 Watts CW Output Power * Characterized with Series Equivalent Large - Signal Impedance Parameters * Integrated ESD Protection * N Suffix Indicates Lead - Free Terminations * 200C Capable Plastic Package * In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
MRF5S9070NR1 MRF5S9070MR1
880 MHz, 70 W, 26 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 1265- 08, STYLE 1 TO - 270 - 2 PLASTIC
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value - 0.5, + 68 - 0.5, + 15 219 1.25 - 65 to +150 200 Unit Vdc Vdc W W/C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 70 W CW Case Temperature 78C, 14 W CW Symbol RJC Value (1) 0.80 0.93 Unit C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114 - B) Machine Model (per EIA/JESD22 - A115 - A) Charge Device Model (per JESD22 - C101- A) Class 2 (Minimum) A (Minimum) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113D, IPC/JEDEC J - STD - 020C Rating 3 Package Peak Temperature 260 Unit C
1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2004. All rights reserved.
MRF5S9070NR1 MRF5S9070MR1 1
RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 A) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 600 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1.0 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 4 Adc) Dynamic Characteristic Input Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss Coss Crss -- -- -- 126 34 1.37 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) gfs 2 -- -- -- 2.7 3.7 0.18 4.7 4 -- 0.22 -- Vdc Vdc Vdc S IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 600 mA, Pout = 14 W Avg., f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 750 kHz Offset. Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss Gps D ACPR IRL 17 29 -- -- 17.8 30 - 47 - 19 -- -- - 45 -9 dB % dBc dB
Typical GSM CW Performances (In Freescale GSM Test Fixture Optimized for 921 - 960 MHz, 50 hm system) VDD = 26 Vdc, IDQ = 400 mA, Pout = 60 W, f = 921 - 960 MHz Power Gain Drain Efficiency Input Return Loss Pout @ 1 dB Compression Point (f = 940 MHz) Gps D IRL P1dB -- -- -- -- 16.4 62 - 12 68 -- -- -- -- dB % dB W
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 921 - 960 MHz, 50 hm system) VDD = 26 Vdc, IDQ = 400 mA, Pout = 25 W Avg., f = 921 - 960 MHz, GSM EDGE Signal Power Gain Drain Efficiency Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset Gps D EVM SR1 SR2 -- -- -- -- -- 17 44 1.5 - 62 - 78 -- -- -- -- -- dB % % dBc dBc (continued)
MRF5S9070NR1 MRF5S9070MR1 2 RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit Typical GSM CW Performances (In Freescale GSM Test Fixture Optimized for 865 - 895 MHz, 50 hm system) VDD = 26 Vdc, IDQ = 400 mA, Pout = 60 W, f = 865 - 895 MHz Power Gain Drain Efficiency Input Return Loss Pout @ 1 dB Compression Point (f = 880 MHz) Gps D IRL P1dB -- -- -- -- 16.4 59 - 15 71 -- -- -- -- dB % dB W
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 865 - 895 MHz, 50 hm system) VDD = 26 Vdc, IDQ = 400 mA, Pout = 25 W Avg., f = 865 - 895 MHz, GSM EDGE Signal Power Gain Drain Efficiency Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset Gps D EVM SR1 SR2 -- -- -- -- -- 17 41 1.35 - 66 - 81 -- -- -- -- -- dB % % dBc dBc
MRF5S9070NR1 MRF5S9070MR1 RF Device Data Freescale Semiconductor 3
VSUPPLY B2 C18 VBIAS + C7 L2 R1 + C11 R2 R3 RF INPUT Z1 L1 C5 Z2 C1 C2 Z3 Z4 Z5 Z6 Z7 C3 Z8 C4 Z9 C6 DUT Z10 Z11 C13 C12 Z12 C14 Z13 Z14 C15 Z15 C16 C17 Z16 RF OUTPUT B1 C8 + C9 C10 C22 C19 + C20 + C21 R4
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9
0.140 x 0.060 Microstrip 0.141 x 0.060 Microstrip 0.280 x 0.060 Microstrip 0.500 x 0.100 Microstrip 0.530 x 0.270 Microstrip 0.155 x 0.270 x 0.530 Taper 0.376 x 0.530 Microstrip 0.116 x 0.530 Microstrip 0.055 x 0.530 Microstrip
Z10 Z11 Z12 Z13 Z14 Z15 Z16 PCB
0.245 x 0.270 Microstrip 0.110 x 0.270 Microstrip 0.055 x 0.270 Microstrip 0.512 x 0.060 Microstrip 0.106 x 0.060 Microstrip 0.930 x 0.060 Microstrip 0.365 x 0.060 Microstrip Taconic RF - 35, 0.030, r = 3.5
Figure 1. MRF5S9070NR1(MR1) Test Circuit Schematic
Table 6. MRF5S9070NR1(MR1) Test Circuit Component Designations and Values
Part B1 B2 C1 C2 C3 C4, C16 C5, C6 C7, C8, C20 C9, C19, C22 C10, C18 C11 C12 C13, C14 C15 C17 C21 L1, L2 R1 R2 R3 R4 Description Small Ferrite Bead, Surface Mount Large Ferrite Bead, Surface Mount 0.6 - 6.0 pF Variable Capacitor, Gigatrim 16 pF Chip Capacitor 7.5 pF Chip Capacitor 0.8 - 8.0 pF Variable Capacitor, Gigatrim 15 pF Chip Capacitors 10 F, 35 V Tantalum Capacitors 0.58 F Chip Capacitors 18 pF Chip Capacitors 100 F, 50 V Electrolytic Capacitor 0.7 pF Chip Capacitor 13 pF Chip Capacitors 3.9 pF Chip Capacitor 22 pF Chip Capacitor 470 F, 63 V Electrolytic Capacitor 12.5 nH Surface Mount Inductors 1 kW Chip Resistor 560 kW Chip Resistor 12 W Chip Resistor 27 W Chip Resistor Part Number 2743019447 2743021447 272715L 100B160JP500X 100B7R5JP500X 272915L 100B150JP500X T491D106K035AS 700A561MP150X 100B180JP500X 515D107M050BB6A 100B0R7BP500X 100B130JP500X 100B3R9JP500X 100B180JP500X SME63VB471M12X25LL A04T - 5 CRCW12061001F100 CRCW12065603F100 CRCW120612R0F100 CRCW120627R0F100 Manufacturer Fair - Rite Fair - Rite Johanson ATC ATC Johanson ATC Kemet ATC ATC Vishay - Dale ATC ATC ATC ATC United Chemi - Con Coilcraft Vishay - Dale Vishay - Dale Vishay - Dale Vishay - Dale
MRF5S9070NR1 MRF5S9070MR1 4 RF Device Data Freescale Semiconductor
B1 C7 R1 VGG C11 C2 C1 R2 R3
C8 C9
C19 B2
C21 VDD C20 R4 C22
C10 C6 L1 C12 C3 C5
C18 L2 C15 C16 C13 C14 C17
C4
CUT OUT AREA
MRF5S9070N Rev 0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. MRF5S9070NR1(MR1) Test Circuit Component Layout
MRF5S9070NR1 MRF5S9070MR1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) 20 19 18 17 16 15 14 13 12 11 10 9 8 860 865 870 875 880 885 890 895 f, FREQUENCY (MHz) Gps D VDD = 26 Vdc, Pout = 14 W (Avg.), IDQ = 600 mA Single -Carrier N-CDMA, IS-95 (Pilot, Sync, Paging, Traffic Codes 8 through 13) 45 40 35 30 25 -40 -45 ACPR ALT -50 -55 -60 -65 -70 900
G ps , POWER GAIN (dB)
ACPR (dBc), ALT (dBc)
IRL
-12 -15 -18 -21 -24 -27 -30
Figure 3. Class AB Broadband Performance
20 IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 900 mA 750 mA 600 mA 450 mA 17 300 mA 16 VDD = 26 Vdc f1 = 880 MHz, f2 = 880.1 MHz Two -Tone Measurements 100 kHz Tone Spacing 10 Pout, OUTPUT POWER (WATTS) PEP 100
-20 -25 -30 -35 -40 -45 -50 -55 -60 1 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 450 mA 300 mA 750 mA 600 mA VDD = 26 Vdc f1 = 880 MHz, f2 = 880.1 MHz Two -Tone Measurements 100 kHz Tone Spacing IDQ = 900 mA
19 G ps , POWER GAIN (dB)
18
15
Figure 4. Two - Tone Power Gain versus Output Power
Figure 5. Third Order Intermodulation Distortion versus Output Power
D, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
20 Gps 18 G ps , POWER GAIN (dB) 16 D 14 12 10 8 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 IMD VDD = 26 Vdc, IDQ = 600 mA f1 = 880 MHz, f2 = 880.1 MHz Two -Tone Measurements, 100 kHz Tone Spacing
60 40 20 0 -20 -40 -60
-10 -20 -30 -40 -50 -60 -70 -80 -90 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 VDD = 26 Vdc, IDQ = 600 mA f1 = 880 MHz, f2 = 880.1 MHz Two -Tone Measurements Center Frequency = 880 MHz 100 kHz Tone Spacing 3rd Order
5th Order 7th Order
Figure 6. Power Gain, Drain Efficiency and IMD versus Output Power
Figure 7. Intermodulation Distortion Products versus Output Power
MRF5S9070NR1 MRF5S9070MR1 6 RF Device Data Freescale Semiconductor
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
ACPR, ADJACENT CHANNEL POWER RATIO (dBc) D, DRAIN EFFICIENCY (%)
55 54 Pout , OUTPUT POWER (dBm) 53 52 51 50 49 48 47 46 45 27 28 29 30 31 32 33 34 35 36 37 Pin, INPUT POWER (dBm) Actual VDD = 26 Vdc, IDQ = 600 mA Pulsed CW, 8 sec (on), 1 msec (off) Center Frequency = 880 MHz P3dB = 49.78 dBm (94.97 W) Ideal
20 18 G ps , POWER GAIN (dB) 16 14 12 10 ACPR 8 ALT 6 1 10 Pout, OUTPUT POWER (WATTS) AVG. Gps
60 40 20 0 VDD = 26 Vdc, IDQ = 600 mA, f = 880 MHz -20 Single -Carrier N-CDMA, IS-95 (Pilot, Sync, Paging, Traffic Codes 8 through 13) -40 -60 -80
D
P1dB = 49.11 dBm (81.54 W)
Figure 8. Pulse CW Output Power versus Input Power
Figure 9. N - CDMA ACPR, Power Gain and Drain Efficiency versus Output Power
20 18 16 14 12 10 8 1 10 Pout, OUTPUT POWER (WATTS) CW 100 VDD = 26 Vdc IDQ = 600 mA f = 880 MHz Gps
70 60 50 40 30 20 10 D, DRAIN EFFICIENCY (%)
D
Figure 10. Power Gain and Drain Efficiency versus CW Output Power
MRF5S9070NR1 MRF5S9070MR1 RF Device Data Freescale Semiconductor 7
Zo = 2
f = 895 MHz Zsource
f = 895 MHz
f = 865 MHz
Zload
f = 865 MHz
VDD = 26 Vdc, IDQ = 600 mA, Pout = 14 W Avg. f MHz 865 875 885 895 Zsource 0.7 + j0.4 0.7 + j0.5 0.6 + j0.5 0.5 + j0.5 Zload 2.1 + j0.6 2.0 + j0.7 1.8 + j0.8 1.8 + j0.9
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 11. Series Equivalent Source and Load Impedance MRF5S9070NR1 MRF5S9070MR1 8 RF Device Data Freescale Semiconductor
NOTES
MRF5S9070NR1 MRF5S9070MR1 RF Device Data Freescale Semiconductor 9
NOTES
MRF5S9070NR1 MRF5S9070MR1 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
B E1 E4 aaa
M 2X
D3
2X
PIN ONE ID
DA
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D1" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D1" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETER- MINED AT DATUM PLANE -H-. 5. DIMENSION b1 DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE b1 DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. 7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. 8. DIMENSIONS "D" AND "E2" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .003 PER SIDE. DIMENSIONS "D" AND "E2" DO INCLUDE MOLD MISMATCH AND ARE DETER- MINED AT DATUM PLANE -D-. DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 aaa INCHES MIN MAX .078 .082 .039 .043 .040 .042 .416 .424 .378 .382 .290 .320 .016 .024 .436 .444 .238 .242 .066 .074 .150 .180 .058 .066 .231 .235 .025 BSC .193 .199 .007 .011 .004 MILLIMETERS MIN MAX 1.98 2.08 0.99 1.09 1.02 1.07 10.57 10.77 9.60 9.70 7.37 8.13 0.41 0.61 11.07 11.28 6.04 6.15 1.68 1.88 3.81 4.57 1.47 1.68 5.87 5.97 0.64 BSC 4.90 5.06 0.18 0.28 0.10
D aaa
M
DA
b1
2X
D1
E
A
E5 E3
EXPOSED HEATSINK AREA PIN 1
PIN 2
D2
PIN 3
c1 H A1 A2
DATUM PLANE
NOTE 7
RF Device Data Freescale Semiconductor
CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC
ZONE J
BOTTOM VIEW F
A E2 E5
2X
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
D
CASE 1265 - 08 ISSUE G TO - 270- 2 PLASTIC
MRF5S9070NR1 MRF5S9070MR1 11
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MRF5S9070NR1 MRF5S9070MR1
MRF5S9070NR1 Rev. 3, 12/2004
12
RF Device Data Freescale Semiconductor

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